A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS:GO(1:1) and (ZnCdS:GO(1:0.5) doped PVP interlayer using current–voltage (I–V) and impedance–voltage (Z

A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS:GO(1:1) and (ZnCdS:GO(1:0.5) doped PVP interlayer using current–voltage (I–V) and impedance–voltage (Z–V) measurements

Published:2023-10 Issue:28 Volume:34 Page:
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Güçlü Ç. Ş.^ORCID,Tanrıkulu E. Erbilen,Dere A.,Altındal Ş.,Azizian-Kalandaragh Y.

Funder

Türkiye Bilimsel ve Teknolojik Araştırma Kurumu

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10854-023-11302-z.pdf

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3. H.C. Card, E.H. Rhoderick, Studies of tunnel MOS diodes I. Interface effects in Silicon Schottky diodes. J. Phys. D 4, 1589 (1971)

4. S. Altındal Yerişkin, M. Balbaşı, İ Orak, The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature. J. Mater. Sci. 28, 14040–14048 (2017)

5. R. Khan, N. Ilyas, M.Z.M. Shamim, M.I. Khan, M. Sohail, N. Rahman, A.A. Khan, S.N. Khang, A. Khan, Oxide-based resistive switching-based devices: fabrication, influence parameters and applications. J. Mater. Chem. C 9, 15755–15788 (2021)

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