Oxide-based resistive switching-based devices: fabrication, influence parameters and applications-Reference-Cited by-同舟云学术

Oxide-based resistive switching-based devices: fabrication, influence parameters and applications

Published:2021 Issue:44 Volume:9 Page:15755-15788
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Khan Rajwali¹²^ORCID,Ilyas Nasir³^ORCID,Shamim Mohammed Zubair M.⁴,Khan Mohammed Ilyas⁵,Sohail Mohammad²,Rahman Nasir²,Khan Abid Ali⁶,Khan Saima Naz⁷,Khan Aurangzeb⁷⁸

Affiliation:

1. College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

2. Department of Physics, University of Lakki Marwat, Lakki Marwat 28420, KP, Pakistan

3. School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

4. Department of Electrical Engineering, College of Engineering, King Khalid University, P.O. Box 394, Abha 61421, Saudi Arabia

5. Department of Chemical Engineering, College of Engineering, King Khalid University, P.O. Box 394, Abha 61421, Saudi Arabia

6. Department of Chemical Sciences, University of Lakki Marwat 28420, KPK, Pakistan

7. Department of Physics, Abdul Wali Khan University Mardan 23200, KPK, Pakistan

8. University of Lakki Marwat, 28420, KPK, Pakistan

Abstract

The nociceptor system in the human body and a memristor-based artificial nociceptor circuit (threshold switch), treating these nociceptors as a practical material system in a threshold switching-based device, which is beneficial for robotic systems.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC03420K

Reference373 articles.

1. Low‐Frequency Negative Resistance in Thin Anodic Oxide Films

2. A theory for negative resistance and memory effects in thin insulating films and its application to Au-ZnS-Au devices

3. Potential Distribution and Negative Resistance in Thin Oxide Films

4. Electric-pulse-induced reversible resistance change effect in magnetoresistive films

5. High-Density Crossbar Arrays Based on a Si Memristive System

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