Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing-Reference-Cited by-同舟云学术

Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing

Published:2024-06 Issue:16 Volume:35 Page:
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Hayat Muhammad Faisal,Rahman Naveed Ur,Ullah Aziz,Rahman Nasir,Sohail Mohammad,Iqbal Shahid,Khan Alamzeb,Abdullaev Sherzod,Althubeiti Khaled,AlOtaibi Sattam,Khan Rajwali^ORCID

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s10854-024-12790-3.pdf

Reference43 articles.

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3. R. Khan et al., Oxide-based resistive switching-based devices: fabrication, influence parameters and applications. J. Mater. Chem. C 9(44), 15755–15788 (2021)

4. R. Khan et al., Oxide-based resistive switching devices: fabrication, influence parameters applications. J Mater. Chem, (2018). https://doi.org/10.1039/D1TC03420K

5. M. Snure, D. Kumar, A. Tiwari, Progress in Zno-based diluted magnetic semiconductors. JOM 61, 72–75 (2009)

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