ZnO/Al:ZnO Transparent Resistive Switching Devices Grown by Atomic Layer Deposition for Memristor Applications-Reference-Cited by-同舟云学术

ZnO/Al:ZnO Transparent Resistive Switching Devices Grown by Atomic Layer Deposition for Memristor Applications

Published:2016-05-05 Issue:19 Volume:32 Page:4983-4995
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Mundle Rajeh¹,Carvajal Christian¹,Pradhan Aswini K.¹

Affiliation:

1. Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, Virginia 23504, United States

Funder

Army Research Office

Division of Human Resource Development

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.6b01014

Reference61 articles.

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5. Ho, C. P.; Yam, Y.Computational Design and Prototype Development of Optical Prism for Augmented Reality Projection. Proceedings of ISOT’12, Int. Symposium on Optomechatronic Technologies, 2012; pp1–4.

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