The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature-Reference-Cited by-同舟云学术

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The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature

Published:2024-12 Issue: Volume:184 Page:108781
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Akın Buket,A.Hameed Sabreen,Altındal Yerişkin Seçkin,Ulusoy Murat^ORCID,Durmuş Haziret

Publisher

Elsevier BV

Reference45 articles.

1. Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN;Reddy;Mater. Sci. Semicond. Process.,2022

2. Inhomogeneous heterojunction performance of Zr/diamond Schottky diode with Gaussian distribution of barrier heights for high sensitivity temperature sensor;Shao;Sensor Actuator Phys.,2022

3. A comparison of electrical parameters of Au/n-Si and Au/(CoSO4–PVP)/n-Si structures (SBDs) to determine the effect of (CoSO4–PVP) organic interlayer at room temperature Journal of Materials Science;Altındal;Materials in Electronics,2019

4. P-NiO/n-GaN heterostructure diode for temperature sensor application;Li;IEEE Sensor. J.,2020

5. Recent advances in Schottky barrier concepts;Tung;Mater. Sci. Eng. R,2001

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