Inhomogeneous heterojunction performance of Zr/diamond Schottky diode with Gaussian distribution of barrier heights for high sensitivity temperature sensor-Reference-Cited by-同舟云学术

Inhomogeneous heterojunction performance of Zr/diamond Schottky diode with Gaussian distribution of barrier heights for high sensitivity temperature sensor

Published:2022-11 Issue: Volume:347 Page:113906
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Shao Guoqing,Wang Juan,Wang Yanfeng,Wang Wei,Wang Hong-Xing

Funder

Key Research and Development Projects of Shaanxi Province

Natural Science Basic Research Program of Shaanxi Province

National Natural Science Foundation of China

National Key Research and Development Program of China

China Postdoctoral Science Foundation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference46 articles.

1. Power semiconductor device figure of merit for high-frequency applications;Baliga;IEEE Electron Device Lett.,1989

2. Investigation of ohmic contact resistance, surface resistance, and channel resistance for hydrogen-terminated diamond MOSFETs;Liu;IEEE Trans. Electron Devices,2022

3. High carrier mobility in single-crystal plasma-deposited diamond;Isberg;Science,2002

4. Diamond as an electronic material;Wort;Mater. Today,2008

5. Hole-drift velocity in natural diamond;Reggiani;Phys. Rev. B.,1981

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