High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond-Reference-Cited by-同舟云学术

High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

Published:2002-09-06 Issue:5587 Volume:297 Page:1670-1672
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Isberg Jan¹,Hammersberg Johan¹,Johansson Erik¹,Wikström Tobias¹,Twitchen Daniel J.²,Whitehead Andrew J.²,Coe Steven E.²,Scarsbrook Geoffrey A.²

Affiliation:

1. ABB Group Services Center, Corporate Research, Nanotechnology and Innovative Materials Group, Västerås, Sweden.

2. De Beers Industrial Diamonds, King's Ride Park, Ascot, UK.

Abstract

Room-temperature drift mobilities of 4500 square centimeters per volt second for electrons and 3800 square centimeters per volt second for holes have been measured in high-purity single-crystal diamond grown using a chemical vapor deposition process. The low-field drift mobility values were determined by using the time-of-flight technique on thick, intrinsic, freestanding diamond plates and were verified by current-voltage measurements on p - i junction diodes. The improvement of the electronic properties of single-crystal diamond and the reproducibility of those properties are encouraging for research on, and development of, high-performance diamond electronics.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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