Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference8 articles.
1. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
2. High performance AlGaN/GaN power switch with HfO2 insulation
3. Improved Linearity for Low-Noise Applications in 0.25-$ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
4. GaN Single-Polarity Power Supply Bootstrapped Comparator for High-Temperature Electronics
5. Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition
Cited by 158 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Impact of post-deposition annealing on the electronic properties of Al2O3/GaN interface by first-principles study;Surfaces and Interfaces;2024-01
2. Effective suppression of interface states in recessed-gate MIS-HEMTs by TMAH wet etching;Applied Physics Express;2023-12-29
3. Passivation of hole traps in SiO2/GaN metal-oxide-semiconductor devices by high-density magnesium doping;Applied Physics Express;2023-10-01
4. Low concentration hydrogen detection properties of metal-insulator-semiconductor AlGaN/GaN HEMT sensor;Sensors and Actuators B: Chemical;2023-10
5. Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance;Applied Physics Letters;2023-09-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3