Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference8 articles.
1. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
2. High performance AlGaN/GaN power switch with HfO2 insulation
3. Improved Linearity for Low-Noise Applications in 0.25-$ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
4. GaN Single-Polarity Power Supply Bootstrapped Comparator for High-Temperature Electronics
5. Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition
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