High performance AlGaN/GaN power switch with HfO2 insulation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3190506
Reference13 articles.
1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
2. Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation
3. Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation
4. Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing
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