Instability Assessment of AlGaN/GaN High Electron Mobility Transistors Under High Drain Current Condition-Reference-Cited by-同舟云学术

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Instability Assessment of AlGaN/GaN High Electron Mobility Transistors Under High Drain Current Condition

Published:2022-11-29 Issue: Volume: Page:
ISSN:
Container-title:2022 Asia-Pacific Microwave Conference (APMC)
language:
Short-container-title:

Author:

Amir Walid¹,Shin Ju-Won¹,Chakraborty Surajit¹,Shin Ki-Yong¹,Hoshi Takuya²,Tsutsumi Takuya²,Sugiyama Hiroki²,Kwon Hyuk-Min³,Kim Tae-Woo¹

Affiliation:

1. University of Ulsan,Department of Electrical, Electronic and Computer Engineering,Ulsan,South Korea,44610

2. NTT Device Technology Laboratories, NTT Corporation,Atsugi,Kanagawa,Japan,243-0198

3. Semiconductor Convergence Campus of Korea Polytechnics,Department of Semiconductor Processing Equipment,Anseong-si,South Korea,17550

Funder

National Research Foundation of Korea (NRF)

Ministry of Science, ICT and Future Planning

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9999720/9999721/10000060.pdf?arnumber=10000060

Reference11 articles.

1. AlGaN/AlN/GaN High Electron Mobility Transistors with Improved Carrier Transport

2. Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors

3. Intrinsic mobility evaluation of high-/spl kappa/ gate dielectric transistors using pulsed I/sub d/-V/sub g/

4. Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors;Electronics;2023-07-11

2. Impact of Charge-Trapping Effects on Reliability Instability in AlxGa1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions;Materials;2023-06-19

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