Author:
Amir Walid,Shin Ju-Won,Shin Ki-Yong,Kim Jae-Moo,Cho Chu-Young,Park Kyung-Ho,Hoshi Takuya,Tsutsumi Takuya,Sugiyama Hiroki,Matsuzaki Hideaki,Kim Tae-Woo
Abstract
AbstractThe characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps were experimentally analyzed because the Al0.25Ga0.75N barrier layer functions as a dielectric owing to its high dielectric constant. The interface trap density Dit and border trap density Nbt were extracted from a long-channel field-effect transistor (FET), conventionally known as a FATFET structure, via frequency-dependent capacitance–voltage (C–V) and conductance–voltage (G–V) measurements. The minimum Dit value extracted by the conventional conductance method was 2.5 × 1012 cm−2·eV−1, which agreed well with the actual transistor subthreshold swing of around 142 mV·dec−1. The border trap density Nbt was also extracted from the frequency-dependent C–V characteristics using the distributed circuit model, and the extracted value was 1.5 × 1019 cm−3·eV−1. Low-frequency (1/f) noise measurement provided a clearer picture of the trapping–detrapping phenomena in the Al0.25Ga0.75N layer. The value of the border trap density extracted using the carrier-number-fluctuation (CNF) model was 1.3 × 1019 cm−3·eV−1, which is of a similar level to the extracted value from the distributed circuit model.
Publisher
Springer Science and Business Media LLC
Reference38 articles.
1. Sheppard, S. T. et al. High-power microwave GaN/AlGaN HEMT’s on semi-insulating silicon carbide substrates. IEEE Electron Device Lett. 20, 161–163 (1999).
2. Brown, D. F. et al. W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE. Tech. Dig.—Int. Electron Devices Meet. IEDM https://doi.org/10.1109/IEDM.2011.6131584 (2011).
3. Algan, G. et al. 60-nm GaN/AlGaN DH-HEMTs with 1.0 Ω·mm Ron, 2.0 A/mm Idmax, and 153 GHz fT 6–7.
4. Shi, J., Eastman, L. F., Xin, X. & Pophristic, M. High performance AlGaN/GaN power switch with HfO2 insulation. Appl. Phys. Lett. 95, 7–10 (2009).
5. Liu, Z. H. et al. Improved linearity for low-noise applications in 0.25-μm GaN MISHEMTs using ALD Al2O3 as gate dielectric. IEEE Electron Device Lett. 31, 803–805 (2010).
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