W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE-Reference-Cited by-同舟云学术

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W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE

Published:2011-12 Issue: Volume: Page:
ISSN:
Container-title:2011 International Electron Devices Meeting
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Author:

Brown D. F.,Williams A.,Shinohara K.,Kurdoghlian A.,Milosavljevic I.,Hashimoto P.,Grabar R.,Burnham S.,Butler C.,Willadsen P.,Micovic M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6123666/6131464/06131584.pdf?arnumber=6131584

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P_out at 94 GHz;IEEE Microwave and Wireless Technology Letters;2024-07

2. High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C;Applied Physics Letters;2024-05-13

3. Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes;Journal of Semiconductors;2024-04-01

4. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08

5. Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz;IEEE Microwave and Wireless Technology Letters;2024-02

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