N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P<sub>out</sub> at 94 GHz-Reference-Cited by-同舟云学术

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N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P_out at 94 GHz

Published:2024-07 Issue:7 Volume:34 Page:907-910
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Collins Henry¹^ORCID,Akso Emre¹^ORCID,Clymore Christopher J.¹,Khan Kamruzzaman¹^ORCID,Hamwey Robert¹,Hatui Nirupam¹,Guidry Matthew¹^ORCID,Keller Stacia¹^ORCID,Mishra Umesh K.¹^ORCID

Affiliation:

1. Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA

Funder

Office of Naval Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10591614/10540328.pdf?arnumber=10540328

Reference28 articles.

1. W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

2. Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz

3. Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs

4. W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz

5. N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz

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