<i>W</i>-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz-Reference-Cited by-同舟云学术

W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz

Published:2023-02 Issue:2 Volume:33 Page:161-164
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Moon Jeong-Sun¹^ORCID,Grabar Bob¹,Wong Joel¹^ORCID,Dao Chuong¹,Arkun Erdem¹,Tai Haw¹,Fanning Dave¹,Miller Nicholas C.²^ORCID,Elliott Michael³,Gilbert Ryan⁴,Venkatesan Nivedhita⁵,Fay Patrick⁵^ORCID

Affiliation:

1. HRL Laboratories, Malibu, CA, USA

2. Air Force Research Laboratory Sensors Directorate, Wright-Patterson Air Force Base, Avionics Cir, OH, USA

3. SelectTech Services, Wright-Patterson Air Force Base, Dayton, OH, USA

4. KBR Inc., Wright-Patterson Air Force Base, Dayton, OH, USA

5. University of Notre Dame, Notre Dame, IN, USA

Funder

United Air Force

Defense Advanced Research Projects Agency

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10042139/09907865.pdf?arnumber=9907865

Reference24 articles.

1. High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz

2. 94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

3. High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation

4. Electric Field Engineering in Graded-Channel GaN-Based HEMTs

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