High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation-Reference-Cited by-同舟云学术

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High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation

Published:2019 Issue: Volume:7 Page:1145-1150
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Harrouche Kathia^ORCID,Kabouche Riad^ORCID,Okada Etienne^ORCID,Medjdoub Farid

Funder

French RENATECH Network

French Government through Program PIA EQUIPEX LEAF

French Defense Procurement Agency

EDA-EuGaNiC and Contract FUI-VeGaN

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8656606/08894405.pdf?arnumber=8894405

Cited by 74 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications;Applied Physics Express;2024-08-01

2. N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P_out at 94 GHz;IEEE Microwave and Wireless Technology Letters;2024-07

3. Optimization of Epitaxial Structures on GaN-on-Si(111) HEMTs with Step-Graded AlGaN Buffer Layer and AlGaN Back Barrier;Coatings;2024-06-02

4. High Power Linearity and Low Leakage Current of AlN/GaN/InGaN Coupling Channel HEMTs With N₂O Oxidation Treatment;IEEE Electron Device Letters;2024-06

5. Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier;Russian Microelectronics;2024-06

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