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High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation

  • Published:2019 Issue: Volume:7 Page:1145-1150
  • ISSN:2168-6734
  • Container-title:IEEE Journal of the Electron Devices Society
  • language:
  • Short-container-title:IEEE J. Electron Devices Soc.

Author:

Harrouche KathiaORCID,Kabouche RiadORCID,Okada EtienneORCID,Medjdoub Farid

Funder

French RENATECH Network

French Government through Program PIA EQUIPEX LEAF

French Defense Procurement Agency

EDA-EuGaNiC and Contract FUI-VeGaN

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Cited by 61 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the effect of different types of SiN layers and cap-GaN on the surface electronic states of AlGaN/GaN heterostructures with 2DEG using X-ray and UV photoelectron spectroscopy;Applied Surface Science;2023-12

2. Advanced Down-Scaling Technology and its Physical Mechanism for 515 GHz GaN HEMT;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

3. High Saturation Current HEMTs with ε-Ga2O3/m-GaN Heterojunctions Towards a Potential Candidate for Radio Frequency Applications;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

4. Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity;Applied Physics Letters;2023-11-13

5. Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications;Microelectronics Reliability;2023-11
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