Electric Field Engineering in Graded-Channel GaN-Based HEMTs
Author:
Funder
Defense Advanced Research Projects Agency (DARPA)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682456.pdf?arnumber=9682456
Reference18 articles.
1. Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation
2. Novel High-speed Linear GaN Technology with High Efficiency
3. RF Performance of GaN-Based Graded-Channel HEMTs
4. Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT
5. noise temperature in silicon in the hot electron region;baechtold;IEEE Transactions on Electron Devices,1971
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1. Impact of Graded AlGaN Buffer Layer Thickness on the DC, RF, Linearity, Intermodulation and Off-State Breakdown Characteristics of AlGaN Channel HEMT;IETE Technical Review;2024-02-19
2. GaN HEMT for High-performance Applications: A Revolutionary Technology;Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering);2023-09-14
3. High-power Density W-band MMIC Amplifiers using Graded-channel GaN HEMTs;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11
4. A new back-to-back graded AlGaN barrier for complementary integration technique based on GaN/AlGaN/GaN platform;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07
5. W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-02
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