High-power Density W-band MMIC Amplifiers using Graded-channel GaN HEMTs-Reference-Cited by-同舟云学术

High-power Density W-band MMIC Amplifiers using Graded-channel GaN HEMTs

Published:2023-06-11 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE/MTT-S International Microwave Symposium - IMS 2023
language:
Short-container-title:

Author:

Moon Jeong-Sun¹,Grabar Bob¹,Wong Joel¹,Tai Joe¹,Ramos Ignacio¹,Arkun Erdem¹,Dao Chuong¹,Fanning Dave¹,Miller Nicholas C.²,Elliott Michael²,Gilbert Ryan²,Venkatesan Nivedhita³,Fay Patrick³

Affiliation:

1. HRL Laboratories,USA

2. The Air Force Research Laboratory Sensors Directorate, WPAFB,USA

3. University of Notre Dame,Department of Electrical Engineering,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10187888/10187785/10188089.pdf?arnumber=10188089

Reference18 articles.

1. Novel High-speed Linear GaN Technology with High Efficiency

2. High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz

3. III-N polarization-graded transistors for millimeter-wave applications—Understanding and future potential

4. Electric Field Engineering in Graded-Channel GaN-Based HEMTs

5. 360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications;Applied Physics Express;2024-08-01

2. Enabling Monolithic Integration of an Advanced 7-Layer Silicon Back-End-of-Line (BEOL) on 40nm GaN for Next Generation MMICs;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

3. A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications;IEEE Journal of Microwaves;2023-10