High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz
Author:
Affiliation:
1. HRL LaboratoryLLC3011 Malibu Canyon RoadMalibuCA90265USA
2. University of Notre DameNotre DameIN46556USA
Funder
Defense Sciences Office, DARPA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2020.0281
Reference14 articles.
1. Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications
2. 55% PAE and high power Ka‐band GaN HEMTs with linearized transconductance via n + GaN source contact ledge;Moon J.S.;IEEE Electron. Device Lett.,2008
3. High-power AlGaN/GaN HEMTs for Ka-band applications
4. Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
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