Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation-Reference-Cited by-同舟云学术

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Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation

Published:2020-01 Issue:1 Volume:41 Page:19-22
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sohel Shahadat H.^ORCID,Rahman Mohammad Wahidur,Xie Andy,Beam Edward^ORCID,Cui Yongjie^ORCID,Kruzich Mark,Xue Hao,Razzak Towhidur^ORCID,Bajaj Sanyam^ORCID,Cao Yu^ORCID,Lu Wu^ORCID,Rajan Siddharth

Funder

Office of Naval Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8944313/08891720.pdf?arnumber=8891720

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate;Microelectronics Journal;2024-10

2. High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications;Applied Physics Express;2024-07-01

3. 2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs;IEEE Electron Device Letters;2024-07

4. High Power Linearity and Low Leakage Current of AlN/GaN/InGaN Coupling Channel HEMTs With N₂O Oxidation Treatment;IEEE Electron Device Letters;2024-06

5. Enhanced Performance of GaN HEMTs in X‐band Applications Using Si_xN/Si₃N₄ Bilayer Passivation Technique;physica status solidi (a);2024-05-08

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