Enabling Monolithic Integration of an Advanced 7-Layer Silicon Back-End-of-Line (BEOL) on 40nm GaN for Next Generation MMICs
Author:
Affiliation:
1. HRL Laboratories,USA
2. TowerSemi,USA
Funder
Defense Advanced Research Projects Agency
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10600173/10600174/10600287.pdf?arnumber=10600287
Reference19 articles.
1. High-power Density W-band MMIC Amplifiers using Graded-channel GaN HEMTs
2. W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz
3. Surmounting W-band Scalar Load-Pull Limitations Using the ASM-HEMT Model for Millimeter-Wave GaN HEMT Technology Large-Signal Assessment
4. W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz
5. Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications
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