Surmounting W-band Scalar Load-Pull Limitations Using the ASM-HEMT Model for Millimeter-Wave GaN HEMT Technology Large-Signal Assessment
Author:
Affiliation:
1. Air Force Research Laboratory Sensors Directorate, WPAFB,OH,USA
2. SelectTech Services, WPAFB,OH,USA
3. KBR, WPAFB,OH,USA
4. HRL Laboratories,Malibu,CA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9896401/9896407/09896585.pdf?arnumber=9896585
Reference9 articles.
1. Maury application note 5A-073,2021
2. A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques
3. Accurate Nonlinear GaN HEMT Simulations from X- to Ka-Band using a Single ASM-HEMT Model;miller;IEEE Wireless and Microwave Technology Conference (WAMICON),2021
4. Physics-Based Multi-Bias RF Large-Signal GaN HEMT Modeling and Parameter Extraction Flow
5. Improving manufacturability of highly scaled GaN HEMTs;siddiqi;accepted for the 2022 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH),2022
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3. N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-07
4. Improving the Precision of On-Wafer W-Band Scalar Load-Pull Measurements;IEEE Journal of Microwaves;2023-07
5. Temperature Dependent Large-Signal Modeling of GaN HEMTs at Ka-Band using the ASM-HEMT;2023 IEEE Wireless and Microwave Technology Conference (WAMICON);2023-04-17
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