Temperature Dependent Large-Signal Modeling of GaN HEMTs at Ka-Band using the ASM-HEMT
Author:
Affiliation:
1. Sensors Directorate,Air Force Research Laboratory,WPAFB,OH,USA
2. Ardent,WPAFB,OH,USA
3. KBR, Inc.,WPAFB,OH,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10124873/10124883/10124913.pdf?arnumber=10124913
Reference13 articles.
1. Surmounting W-band Scalar Load-Pull Limitations Using the ASM-HEMT Model for Millimeter-Wave GaN HEMT Technology Large-Signal Assessment
2. Accurate non-linear harmonic simulations at X-band using the ASM-HEMT model validated with NVNA measurements
3. Accurate Nonlinear GaN HEMT Simulations from X- to Ka-Band using a Single ASM-HEMT Model
4. Extreme Temperature Modeling of AlGaN/GaN HEMTs
5. GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Remembering John Bandler [In Memoriam];IEEE Microwave Magazine;2024-01
2. Nonlinear RF Modeling of GaN HEMTs With Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals];IEEE Microwave Magazine;2024-01
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