GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform-Reference-Cited by-同舟云学术

GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

Published:2022-11 Issue:11 Volume:43 Page:1842-1845
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yuan Mengyang¹^ORCID,Xie Qingyun¹^ORCID,Fu Kai²^ORCID,Hossain Toiyob³^ORCID,Niroula John¹,Greer James A.¹,Chowdhury Nadim³^ORCID,Zhao Yuji²^ORCID,Palacios Tomas¹^ORCID

Affiliation:

1. Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA

2. Department of Electrical and Computer Engineering, Rice University, Houston, TX, USA

3. Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh

Funder

National Aeronautics and Space Administration

LockheedMartin Corporation

Air Force Office of Scientific Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9927475/09878116.pdf?arnumber=9878116

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