Monolithic Control and Drive Blocks of AlGaN/GaN MIS-HEMTs for DC-DC Buck Converters-Reference-Cited by-同舟云学术

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Monolithic Control and Drive Blocks of AlGaN/GaN MIS-HEMTs for DC-DC Buck Converters

Published:2024-09 Issue:9 Volume:71 Page:5597-5602
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cui Pengju¹^ORCID,Li Ang²^ORCID,Zhu Yuhao¹^ORCID,Li Fan¹^ORCID,Sun Ruize³^ORCID,Liu Wen¹^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering, School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, China

2. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China

3. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Science and Technology Program of Suzhou

Key Program Special Fund in Xi’an Jiaotong-Liverpool University

Xi’an Jiaotong-Liverpool University Research Development Funding

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10623601.pdf?arnumber=10623601

Reference26 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. The 2018 GaN power electronics roadmap

3. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

4. GaN Integration Technology, an Ideal Candidate for High-Temperature Applications: A Review

5. Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices

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