Extreme Temperature Modeling of AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

Extreme Temperature Modeling of AlGaN/GaN HEMTs

Published:2020-02 Issue:2 Volume:67 Page:430-437
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Albahrani Sayed Ali¹^ORCID,Mahajan Dhawal²^ORCID,Kargarrazi Saleh³^ORCID,Schwantuschke Dirk¹,Gneiting Thomas⁴^ORCID,Senesky Debbie G.³^ORCID,Khandelwal Sourabh²^ORCID

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany

2. Department of Engineering, Macquarie University, Sydney, NSW, Australia

3. Department of Aeronautics and Astronautics, Stanford University, Stanford, CA, USA

4. AdMOS GmbH, Frickenhausen, Germany

Funder

German Federal Ministry of Education and Research in the Framework of the Project GaNScan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8970632/08957005.pdf?arnumber=8957005

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