Charge-Based Flicker Noise Modeling of GaN HEMTs Down to Cryogenic Temperatures
Author:
Affiliation:
1. Department of Electrical Engineering, IIT Kanpur, Kanpur, Nanolab, India
2. NIT Srinagar, Srinagar, India
Funder
Prime Ministers Research Fellow (PMRF) Scheme
DST-Science and Engineering Board (SERB) Startup Research Grant
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10230308/10179939.pdf?arnumber=10179939
Reference38 articles.
1. The impact of device type and sizing on phase noise mechanisms
2. A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices
3. Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation
4. A New Small-Signal Parameter Extraction Technique for Large Gate-Periphery GaN HEMTs
5. 1/f noise and germanium surface properties;mcwhorter;Semiconductor Surface Physics,1957
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