Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation-Reference-Cited by-同舟云学术

Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation

Published:2020-08 Issue:8 Volume:67 Page:3062-3068
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Takakura K.^ORCID,Putcha V.^ORCID,Simoen E.^ORCID,Alian A. R.,Peralagu U.^ORCID,Waldron N.,Parvais B.^ORCID,Collaert N.

Funder

Japan Society for the Promotion of Science (JSPS) KAKENHI

IMEC’s Partner Program on High-Speed Analog and RF Devices

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9146596/09127093.pdf?arnumber=9127093

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