Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs-Reference-Cited by-同舟云学术

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Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs

Published:2023-10 Issue: Volume:138 Page:110204
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Wang Hongyue,Simoen Eddy,Ge Lei,Liu Yuebo,Liu Chang,Xu Mingsheng,Shi Yijun,Cai Zongqi,Peng Yan,Wang Xiwei,Wang Jinwang

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference51 articles.

1. Progress toward diamond power field-effect transistors;Geis;Phys. Status Solidi A,2018

2. High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures;Sasama;Nat. Electron.,2022

3. Thermal performance of diamond field-effect transistors;Lundh;Appl. Phys. Lett.,2021

4. Logic circuits with hydrogenated diamond field-effect transistors;Liu;IEEE Electron Device Lett.,2017

5. H-terminated polycrystalline diamond p-channel transistors on GaN-on-silicon;Soleimanzadeh;IEEE Electron Device Lett.,2020

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