Thermal performance of diamond field-effect transistors-Reference-Cited by-同舟云学术

Thermal performance of diamond field-effect transistors

Published:2021-10-04 Issue:14 Volume:119 Page:143502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lundh James Spencer¹^ORCID,Shoemaker Daniel¹,Birdwell A. Glen²,Weil James D.²^ORCID,De La Cruz Leonard M.²,Shah Pankaj B.²,Crawford Kevin G.²^ORCID,Ivanov Tony G.²,Wong Hiu Yung³^ORCID,Choi Sukwon¹^ORCID

Affiliation:

1. Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

2. U.S. Army Research Laboratory, Adelphi, Maryland 20783, USA

3. Department of Electrical Engineering, San José State University, San José, California 95192, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0061948

Reference48 articles.

1. Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

2. Diamond as an electronic material

3. RF Operation of Hydrogen-Terminated Diamond Field Effect Transistors: A Comparative Study

4. LiF/Al₂O₃ as Dielectrics for MOSFET on Single Crystal Hydrogen-Terminated Diamond

5. Temperature dependent transport properties in GaN, Al/sub x/Ga/sub 1-x/N, and In/sub x/Ga/sub 1-x/N semiconductors

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