A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices-Reference-Cited by-同舟云学术

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A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices

Published:2012-03 Issue: Volume: Page:
ISSN:
Container-title:2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)
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Author:

Khandelwal Sourabh,Fjeldly Tor A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6178311/6188876/06188891.pdf?arnumber=6188891

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Integration of AlGaN/GaN HEMT and Micro-Electro-Mechanical Systems (MEMS) For Biomedical Applications: A Review;2024 International Conference on Integrated Circuits, Communication, and Computing Systems (ICIC3S);2024-06-08

2. Analytical model development of surface potential, electric field, and subthreshold swing for junction-less GaN FINFET, for next generation RFIC application;Multiscale and Multidisciplinary Modeling, Experiments and Design;2023-12-27

3. Accurate Analytical eGaN^® HEMT Parameterizable Matlab^® Model Based on Datasheet from Manufacturer and Its Applications in Optimal Design;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

4. Charge-Based Flicker Noise Modeling of GaN HEMTs Down to Cryogenic Temperatures;IEEE Electron Device Letters;2023-09

5. Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert W‐function;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-04-24

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