A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/6178311/6188876/06188891.pdf?arnumber=6188891
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Analytical model development of surface potential, electric field, and subthreshold swing for junction-less GaN FINFET, for next generation RFIC application;Multiscale and Multidisciplinary Modeling, Experiments and Design;2023-12-27
2. Accurate Analytical eGaN® HEMT Parameterizable Matlab® Model Based on Datasheet from Manufacturer and Its Applications in Optimal Design;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
3. Charge-Based Flicker Noise Modeling of GaN HEMTs Down to Cryogenic Temperatures;IEEE Electron Device Letters;2023-09
4. Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert W‐function;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-04-24
5. An estimation of 2DEG density for GaN HEMT using analytical equation considering the charge conservation low;Solid-State Electronics;2022-02
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