Analytical model development of surface potential, electric field, and subthreshold swing for junction-less GaN FINFET, for next generation RFIC application
Author:
Publisher
Springer Science and Business Media LLC
Subject
Applied Mathematics,Mechanics of Materials,General Materials Science
Link
https://link.springer.com/content/pdf/10.1007/s41939-023-00326-x.pdf
Reference38 articles.
1. Čučak D (2017) hysics-based analytical modelling and optimization of the GaN HEMT with the field-plate structure for application in high-frequency switching converters. Doctoral dissertation, Industriales
2. Deng W, Ma X, Huang J (2014) Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs. Aip Adv 4(8)
3. Esposto M, Chini A, Rajan S (2011) Analytical model for power switching GaN-based HEMT design. IEEE Trans Electron Dev 58(5):1456–1461
4. Ghanatian H, Hosseini SE (2016) Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs. J Comput Electron 15:508–515
5. Gildenblat G, Chen B (2008) Compact modelinghttps://doi.org/10.1109/CICC.2008.4672072
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