Accurate Nonlinear GaN HEMT Simulations from X- to Ka-Band using a Single ASM-HEMT Model-Reference-Cited by-同舟云学术

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Accurate Nonlinear GaN HEMT Simulations from X- to Ka-Band using a Single ASM-HEMT Model

Published:2021-04-28 Issue: Volume: Page:
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Container-title:2021 IEEE 21st Annual Wireless and Microwave Technology Conference (WAMICON)
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Author:

Miller Nicholas C.,Moser Neil A.,Fitch Robert C.,Gillespie James K.,Liddy Kyle J.,Walker Dennis E.,Green Andrew J.,Chabak Kelson D.,Elliott Michael,Gilbert Ryan,Young Richard,Werner Elizabeth,Lindquist Miles,Roblin Patrick

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9443232/9443579/09615166.pdf?arnumber=9615166

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of DC Characteristics of AlGaN/GaN HEMT and its Compact Models;Nanoelectronic Devices and Applications;2024-06-26

2. Remembering John Bandler [In Memoriam];IEEE Microwave Magazine;2024-01

3. Nonlinear RF Modeling of GaN HEMTs With Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals];IEEE Microwave Magazine;2024-01

4. N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-07

5. Compact Modeling of N-Polar GaN HEMTs for Intermodulation Distortion in Millimeter-Wave Bands;IEEE Transactions on Microwave Theory and Techniques;2023-05

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