Compact Modeling of N-Polar GaN HEMTs for Intermodulation Distortion in Millimeter-Wave Bands
Author:
Affiliation:
1. Electrical and Computer Engineering Department, University of California at Santa Barbara (UCSB), Santa Barbara, CA, USA
Funder
Defense Advanced Research Projects Agency’s DREaM Program
Office of Naval Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/10120630/10064201.pdf?arnumber=10064201
Reference31 articles.
1. A scalable EE_HEMT based large signal model for multi-finger AlGaN/GaN HEMTs for linear and non-linear circuit design
2. A new empirical nonlinear model for HEMT and MESFET devices
3. Modeling GaN: Powerful but Challenging
4. RF GaN Device Model Survey and Model Parameter Extraction Flows
5. Influence of the Dynamic Access Resistance in the$g_m$and$f_T$Linearity of AlGaN/GaN HEMTs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Measurement and Modeling of GaN HEMTs Operating at 500 °C;2024 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE);2024-08-06
2. Analyzing Ga-Polar and N-Polar GaN HEMTs: A Comparative Study for High-Power DC Performance in Semiconductor Applications;2024 7th International Conference on Devices, Circuits and Systems (ICDCS);2024-04-23
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