Accurate non-linear harmonic simulations at X-band using the ASM-HEMT model validated with NVNA measurements
Author:
Affiliation:
1. Air Force Research Laboratory Sensors Directorate,OH,45433
2. KBR,OH,45433
3. Macquarie University,Sydney,Australia
4. SisConsult Engineering Office,Magstadt,Germany
5. SelectTech Services,OH,45433
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9719587/9719681/09719743.pdf?arnumber=9719743
Reference14 articles.
1. Physics-Based Multi-Bias RF Large-Signal GaN HEMT Modeling and Parameter Extraction Flow
2. Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process
3. Accurate Nonlinear GaN HEMT Simulations from X- to Ka-Band using a Single ASM-HEMT Model
4. A new small-signal modeling and extraction method in AlGaN/GaN HEMTs
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2. Nonlinear RF Modeling of GaN HEMTs With Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals];IEEE Microwave Magazine;2024-01
3. N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-07
4. Temperature Dependent Large-Signal Modeling of GaN HEMTs at Ka-Band using the ASM-HEMT;2023 IEEE Wireless and Microwave Technology Conference (WAMICON);2023-04-17
5. Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport;IEEE Transactions on Electron Devices;2023-02
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