Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport-Reference-Cited by-同舟云学术

Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport

Published:2023-02 Issue:2 Volume:70 Page:435-442
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Miller Nicholas C.¹^ORCID,Grupen Matt¹^ORCID,Islam Ahmad E.¹^ORCID,Albrecht John D.²^ORCID,Frey Dave³^ORCID,Young Richard⁴^ORCID,Lindquist Miles⁵,Green Andrew J.¹,Walker Dennis E.¹,Chabak Kelson D.¹^ORCID

Affiliation:

1. Air Force Research Laboratory Sensors Directorate, Wright-Patterson AFB, Dayton, OH, USA

2. Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI, USA

3. CAES, Forsyth, MO, USA

4. KBR Inc., Beavercreek, OH, USA

5. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, USA

Funder

Air Force Office of Scientific Research

Air Force Research Laboratory

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10025571/09994658.pdf?arnumber=9994658

Reference43 articles.

1. Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors

2. Computational study of Fermi kinetics transport applied to large-signal RF device simulations

3. A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs

4. An alternative treatment of heat flow for charge transport in semiconductor devices

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