Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length-Reference-Cited by-同舟云学术

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Published:2024-03 Issue:3 Volume:71 Page:1805-1811
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Islam Ahmad E.¹^ORCID,Sepelak Nicholas P.²,Miesle Adam T.²,Lee Hanwool³^ORCID,Snure Michael¹,Nikodemski Stefan²,Walker Dennis E.¹,Miller Nicholas C.¹^ORCID,Grupen Matt¹^ORCID,Leedy Kevin D.¹^ORCID,Liddy Kyle J.¹,Crespo Antonio¹^ORCID,Hughes Gary R.¹,Zhu Wenjuan³^ORCID,Poling Brian¹,Tetlak Stephen¹^ORCID,Chabak Kelson D.¹^ORCID,Green Andrew J.¹

Affiliation:

1. Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH, USA

2. KBR, Inc., Beavercreek, OH, USA

3. Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL, USA

Funder

Air Force Research Laboratory, Sensors Directorate

Air Force Office of Scientific Research Laboratory Research Initiation Request

Microsystems Technology Office at Defense Advanced Research Projects Agency

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10457976/10413986.pdf?arnumber=10413986