Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz-Reference-Cited by-同舟云学术

Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz

Published:2023-06-25 Issue: Volume: Page:
ISSN:
Container-title:2023 Device Research Conference (DRC)
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Author:

Akso Emre¹,Clymore Christopher¹,Liu Wenjian¹,Collins Henry¹,Romanczyk Brian¹,Li Weiyi¹,Hatui Nirupam¹,Wurm Christian¹,Keller Stacia¹,Guidry Matthew¹,Mishra Umesh K.¹

Affiliation:

1. University of California,Department of Electrical and Computer Engineering,Santa Barbara,CA,93106

Funder

Office of Naval Research

DARPA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10186880/10186890/10187008.pdf?arnumber=10187008

Reference6 articles.

1. Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications;Applied Physics Express;2024-08-01

2. N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P_out at 94 GHz;IEEE Microwave and Wireless Technology Letters;2024-07

3. Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz;IEEE Microwave and Wireless Technology Letters;2024-04

4. N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz;IEEE Microwave and Wireless Technology Letters;2024-03

5. Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz;IEEE Microwave and Wireless Technology Letters;2024-02