N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz-Reference-Cited by-同舟云学术

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N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz

Published:2024-03 Issue:3 Volume:34 Page:287-290
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Collins Henry¹^ORCID,Akso Emre¹^ORCID,Hatui Nirupam¹,Clymore Christopher J.¹,Wurm Christian¹,Hamwey Robert¹^ORCID,Guidry Matthew¹^ORCID,Keller Stacia¹^ORCID,Mishra Umesh K.¹^ORCID

Affiliation:

1. Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA

Funder

Office of Naval Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10470451/10413483.pdf?arnumber=10413483

Reference13 articles.

1. W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

2. Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs

3. Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz

4. Design, fabrication and characterization of highly linear N-polar GaN MIS-HEMT for mm-wave receiver applications;Shrestha,2020

5. High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Investigation of Single and Double Channel AlGaN/GaN HEMTs for LNAs;Springer Proceedings in Physics;2024

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