High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz-Reference-Cited by-同舟云学术

High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

Published:2020-05 Issue:5 Volume:41 Page:681-684
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shrestha Pawana^ORCID,Guidry Matthew^ORCID,Romanczyk Brian^ORCID,Hatui Nirupam,Wurm Christian,Krishna Athith^ORCID,Pasayat Shubhra S.^ORCID,Karnaty Rohit R.^ORCID,Keller Stacia,Buckwalter James F.^ORCID,Mishra Umesh K.^ORCID

Funder

Defense Advanced Research Projects Agency

Defense University Research Instrumentation Program (DURIP) grants through the Office of Naval Research (ONR, Dr. Paul Maki) and the Army Research Office

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9079222/09036857.pdf?arnumber=9036857

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