Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs
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Published:2023-09-09
Issue:18
Volume:16
Page:6138
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ISSN:1996-1944
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Container-title:Materials
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language:en
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Short-container-title:Materials
Author:
Shin Ki-Yong1, Shin Ju-Won1, Amir Walid1ORCID, Chakraborty Surajit1ORCID, Shim Jae-Phil2, Lee Sang-Tae2, Jang Hyunchul2, Shin Chan-Soo2, Kwon Hyuk-Min3, Kim Tae-Woo1ORCID
Affiliation:
1. Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan 44610, Republic of Korea 2. Korea Advanced Nano Fab Center, Suwon-si 16229, Republic of Korea 3. Department of Semiconductor Processing Equipment, Semiconductor Convergence Campus of Korea Polytechnics, Anseong-si 17550, Republic of Korea
Abstract
Our investigation focused on assessing the influence of the metamorphic buffer in metamorphic high-electron-mobility transistors (MHEMT) that were grown on GaAs substrates. While an MHEMT exhibited elevated off-state current levels, its direct current (DC) and radio frequency (RF) traits were found to be comparable to those of InP-based lattice-matched high-electron-mobility transistors (LM-HEMTs). However, the Pulsed I–V measurement results confirmed the presence of the fast transient charging effect, leading to a more substantial degradation in drain current observed in MHEMT. In addition, through the low-frequency noise characteristics, it was confirmed that the dominant trapping location was located in the bulk site. The slope of the 1/f noise measurement indicated that the primary trapping site was in proximity to the bulk traps. The carrier-number-fluctuation (CNF) model was employed to extract the bulk trap density (Nt). For the LM-HEMTs, the value was at 3.27 × 1016 eV−1·cm−3, while for the MHEMT, it was 3.56 × 1017 eV−1·cm−3.
Funder
National Research Foundation of Korea
Subject
General Materials Science
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