Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz

Published:2007 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE International Electron Devices Meeting
language:
Short-container-title:

Author:

Lai R.,Mei X. B.,Deal W. R.,Yoshida W.,Kim Y. M.,Liu P. H.,Lee J.,Uyeda J.,Radisic V.,Lange M.,Gaier T.,Samoska L.,Fung A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4418847/4418848/04419013.pdf?arnumber=4419013

Cited by 202 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain;Journal of Applied Physics;2024-04-09

2. Introduction to 5G applications and beyond;New Materials and Devices Enabling 5G Applications and Beyond;2024

3. Mutually Injection Locked Multi-Element Terahertz Oscillator Based on AlGaN/GaN High Electron Mobility Avalanche Transit Time Devices;IEEE Access;2024

4. Analysis of High-Temperature Effects on $$InAs/In_{0.3}Al_{0.7}As/InSb/In_{0.3}Al_{0.7}As$$ pHEMTs on Accessing RF/Analog performance: A Machine Learning Predictive Modeling;Transactions on Electrical and Electronic Materials;2023-11-09

5. Impact of SiO2 hardmask on the DC and RF characteristics of InP HEMTs;Journal of Materials Science: Materials in Electronics;2023-10

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP