Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1899255
Reference13 articles.
1. AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise
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3. 30-W/mm GaN HEMTs by Field Plate Optimization
4. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors
5. Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors
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