Affiliation:
1. School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
Abstract
This paper proposes a math-physical correlative method that monitors deep defect response by electrical measurement and calculates the state density by designed mathematical processing. The extracted Gaussian distribution of deep defects was discussed according to the theoretical model for the density of states. The accuracy of this method was also verified through 1/f low frequency noise analysis. The origination of deep defects was investigated by transmission electron microscope, x-ray photoelectron spectroscopy, and photoluminescence analysis, and a molecular model was constructed. Therefore, multiple perspectives of deep defects have been studied by combining electrical measurements, mathematical data processing, and materials analysis, providing inspiration for future comprehensive study on deep defects of the GaN-based device.
Funder
National Natural Science Foundation of China
National Natural Science Foundation of China-Guangdong Joint Fund
Shenzhen Municipal Scientific Program
Subject
Physics and Astronomy (miscellaneous)