Affiliation:
1. Key Lab of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China
2. China Aerospace Science and Industry Defense Technology Research and Test Center 2 , Peking 100039, People's Republic of China
Abstract
In this work, the effects of proton-induced trap evolution on the electrical performances of AlGaN/GaN metal–insulator–semiconductor (MIS) high-electron-mobility-transistors (HEMTs) have been investigated in detail. Contrary to observed proton-induced degradation in sheet electron density (ns), carrier mobility (μn), and sheet resistance (RSH), a significant improvement in gate leakage current (IG) and off-state drain–source breakdown voltage (BVDS) is found in irradiated devices. The low-frequency noise (LFN) results show that the density of traps in the AlGaN layer and AlGaN/GaN interface increases after irradiation, which leads to a degradation in ns, μn, and RSH and an improvement in BVDS due to enhanced electron trapping and depletion. Furthermore, the measurement results obtained from the frequency-dependent conductance technique show that irradiated devices exhibit decreased trap density (DT) at the insulator/semiconductor interface with hardly changed trap energy level (ET), which confirms the observed proton-induced decrease in IG. An increase in DT at the AlGaN/GaN interface is also found after irradiation, which is consistent with LFN results. These traps with deeper ET induce a serious Coulomb scattering effect. This work provides valuable information for the systematic understanding of the proton irradiation effect of AlGaN/GaN MIS-HEMTs.
Funder
National Key Research and Development Project of China
Fundamental Research Funds for the Central Universities
Innovation Fund of Xidian University
National Natural Science Foundation of China
Subject
Physics and Astronomy (miscellaneous)
Cited by
1 articles.
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