State of the art on gate insulation and surface passivation for GaN-based power HEMTs-Reference-Cited by-同舟云学术

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State of the art on gate insulation and surface passivation for GaN-based power HEMTs

Published:2018-05 Issue: Volume:78 Page:85-95
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hashizume Tamotsu,Nishiguchi Kenya,Kaneki Shota,Kuzmik Jan,Yatabe Zenji

Funder

JSPS KAKENHI

Strategic International Collaborative Research Program (SICORP), Japan Science and Technology Agency

Council for Science, Technology and Innovation

Cross-ministerial Strategic Innovation Promotion Program

NEDO

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference125 articles.

1. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

2. GaN transistors on Si for switching and high-frequency applications

3. Recent progress of GaN power devices for automotive applications

4. Challenges for energy efficient wide band gap semiconductor power devices

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1. Interface state density in mist chemical vapor deposited Al₂O₃/AlGaN/GaN structure;Japanese Journal of Applied Physics;2024-08-01

2. Enhanced Shubnikov–de Haas Oscillations in High Mobility InAlN/GaN Two-Dimensional Electron Gas;ACS Applied Electronic Materials;2024-08-01

3. Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric;Applied Physics Letters;2024-07-22

4. Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors;Electronics;2024-07-15

5. Accurate band alignment of sputtered Sc₂O₃ on GaN for high electron mobility transistor applications;Semiconductor Science and Technology;2024-06-12

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