Enhanced Shubnikov–de Haas Oscillations in High Mobility InAlN/GaN Two-Dimensional Electron Gas-Reference-Cited by-同舟云学术

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Enhanced Shubnikov–de Haas Oscillations in High Mobility InAlN/GaN Two-Dimensional Electron Gas

Published:2024-08-01 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Karmakar Chiranjit¹²^ORCID,Kaneriya Rakesh¹^ORCID,Mukherjee Sudip³,Sinha Santanu¹,Kumar Punam Pradeep¹,Babu Peram Delli³,Joshi Utpal S.²

Affiliation:

1. Micro Electronics Development Group, Space Applications Centre, ISRO, Ahmedabad 380015, India

2. Department of Physics, University School of Sciences, Gujarat University, Ahmedabad 380009, India

3. UGC−DAE Consortium for Scientific Research, Mumbai Centre, Trombay, Mumbai 400085, India

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c01089

Reference45 articles.

1. Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

2. Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content AlxGa1−xN/AlyGa1−yN asymmetrical heterostructure

3. Self-Powered GaN-Based MSM Ultraviolet Photodetector With Asymmetrical Interdigitated Structure

4. High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1−xN/GaN heterostructures

5. Magnetotransport properties of lattice-matched In0.18Al0.82N/AlN/GaN heterostructures

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