Self-Powered GaN-Based MSM Ultraviolet Photodetector With Asymmetrical Interdigitated Structure-Reference-Cited by-同舟云学术

Self-Powered GaN-Based MSM Ultraviolet Photodetector With Asymmetrical Interdigitated Structure

Published:2024-01 Issue:1 Volume:71 Page:922-926
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Gong Biao¹,Ye Bingjie¹,Gu Yan¹,Xie Feng²^ORCID,Zhang Xiumei¹,Qian Weiying¹,Zhang Xiangyang¹,Lu Naiyan¹,Yang Guofeng¹^ORCID

Affiliation:

1. School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi, China

2. Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei, China

Funder

National Natural Science Foundation of China

Key Research and Development Program of Jiangsu Province

Natural Science Foundation of Jiangsu Province

Anhui Provincial Natural Science Foundation

Fundamental Research Funds for Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10382412/10355926.pdf?arnumber=10355926

Reference40 articles.

1. Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

2. Wide-bandgap semiconductor ultraviolet photodetectors

3. Current advances in solar-blind photodetection technology: using Ga2O3 and AlGaN

4. GaN Schottky Metal–Semiconductor–Metal UV Photodetectors on Si(111) Grown by Ammonia-MBE

5. A review of photodetectors for sensing light-emitting reporters in biological systems

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