Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
https://link.springer.com/content/pdf/10.1007/s11432-021-3377-2.pdf
Reference28 articles.
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3. Chen K J, Haberlen O, Lidow A, et al. GaN-on-Si power technology: devices and applications. IEEE Trans Electron Device, 2017, 64: 779–795
4. Zhu J J, Zhu Q, Chen L X, et al. Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures. Appl Phys Lett, 2017, 111: 163502
5. Yatabe Z, Hori Y, Ma W C, et al. Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors. Jpn J Appl Phys, 2014, 53: 100213
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