Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors-Reference-Cited by-同舟云学术

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Published:2014-09-05 Issue:10 Volume:53 Page:100213
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yatabe Zenji,Hori Yujin,Ma Wan-Cheng,Asubar Joel T.,Akazawa Masamichi,Sato Taketomo,Hashizume Tamotsu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=10/a=100213/pdf

Reference73 articles.

1. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

2. GaN on Si Technologies for Power Switching Devices

3. Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

4. 600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications

5. Normally-off GaN switching 400V in 1.4ns using an ultra-low resistance and inductance gate drive

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