Impact of post-deposition annealing on the electronic properties of Al2O3/GaN interface by first-principles study
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry
Reference60 articles.
1. GaN-on-Si power technology: devices and applications;Chen;IEEE Trans. Electron Devices,2017
2. Improved performance of fully-recessed high-threshold-voltage GaN MIS-HEMT with in situ H₂/N₂ plasma pretreatment;Zhang;IEEE Electron Device Lett.,2022
3. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric;Hashizume;Appl. Phys. Lett.,2003
4. 1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation;Oka;Appl. Phys. Express.,2015
5. Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN;Chang;Appl. Phys. Lett.,2007
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